Power semiconductor module and method for operating a power semiconductor module

Power semiconductor module and method for operating a power semiconductor module

  • CN 102,136,469 A
  • Filed: 11/19/2010
  • Published: 07/27/2011
  • Est. Priority Date: 11/19/2009
  • Status: Active Application
First Claim
Patent Images

1. power semiconductor modular comprises:

  • -circuit carrier (2), it comprises the have end face insulating carrier (20) of (20t), metal layer (22) is arranged on the described end face;

    -power semiconductor chip (8), it is arranged on the side that deviates from the insulating carrier (20) on the circuit carrier (2) of metal layer (22), and on it deviates from the end face (8t) of circuit carrier (2), having upper chip metallide (82), described upper chip metallide is made of the copper or the copper alloy that have more than or equal to the thickness (d82) of 1 μ

    m;

    -electric connecting conductor (85), it is made of copper or copper alloy, and locates to be connected to upper chip metallide (82) at link position (8c);

    -potting compound (5), described potting compound-extend at least on the side that deviates from circuit carrier (2) of power semiconductor chip (8) from circuit carrier (2), and cover described fully;

    -in the zone of link position (8c), surround described bonding conductor at least;

    -have under 25 ℃

    temperature according to DIN ISO 2137 and to be less than or equal to 30 penetrance.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×