Photolithography method and double patterning strategy

Photolithography method and double patterning strategy

  • CN 102,147,568 A
  • Filed: 08/04/2010
  • Published: 08/10/2011
  • Est. Priority Date: 02/09/2010
  • Status: Active Application
First Claim
Patent Images

1. lithographic patterning method comprises:

  • In a substrate, form one first resistance agent pattern, have a plurality of openings in this first resistance agent pattern and be positioned in this substrate;

    This first resistance agent pattern is toasted, to form a resistance agent pattern that toasted;

    AndIn this substrate and a plurality of openings that are positioned at the resistance agent pattern of this baking form one second blocking layers, wherein the resistance agent pattern of this baking is insoluble to this second blocking layer.

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