Manufacturing methods of static random access memory and semiconductor device

Manufacturing methods of static random access memory and semiconductor device

  • CN 102,148,199 A
  • Filed: 06/13/2010
  • Published: 08/10/2011
  • Est. Priority Date: 02/08/2010
  • Status: Active Application
First Claim
Patent Images

1. the manufacture method of a static RAM comprises:

  • One substrate is provided;

    On aforesaid substrate, form one first dummy pattern;

    Along at least one sidewall of above-mentioned first dummy pattern, form one first clearance wall;

    Remove above-mentioned first dummy pattern;

    AndBy removing the part aforesaid substrate that is not covered, form one first fin of above-mentioned static RAM by above-mentioned first clearance wall.

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