Light emitting device and light emitting device package and lighting system

Light emitting device and light emitting device package and lighting system

  • CN 102,157,658 B
  • Filed: 02/11/2011
  • Issued: 04/22/2015
  • Est. Priority Date: 02/11/2010
  • Status: Active Grant
First Claim
Patent Images

1. a luminescent device, comprising:

  • Ray structure layer, described ray structure layer comprises the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer, described active layer is positioned at below described first conductive-type semiconductor layer, and described second conductive-type semiconductor layer is positioned at below described active layer;

    Conductive layer, described conductive layer is positioned at below described second conductive-type semiconductor layer;

    Adhesion layer, described adhesion layer is positioned at below described conductive layer;

    Supporting member, described supporting member is positioned at below described adhesion layer;

    Contact electrode, described contact electrode is connected to described first conductive-type semiconductor layer;

    First lead-in wire electrode, described first lead-in wire arrangement of electrodes is below described supporting member;

    First electrode, described contact electrode is connected to described first lead-in wire electrode by described first electrode, and described first arrangement of electrodes is at the first area place of described supporting member;

    Second electrode, described second Electrode connection is to described adhesion layer, and described second arrangement of electrodes is at the second area place of described supporting member;

    Second lead-in wire electrode, described second lead-in wire Electrode connection is to described second electrode, and described second lead-in wire arrangement of electrodes is below described supporting member;

    First insulating barrier, described first insulating barrier is between described contact electrode and described ray structure layer;

    AndSecond insulating barrier, described second insulating barrier between described first electrode and the cross side of described adhesion layer,Wherein, the inboard portion of described first insulating barrier is arranged between described adhesion layer and described second conductive-type semiconductor layer, and the Outboard Sections of described first insulating barrier exceeds the cross side of described ray structure layer and stretches out,Wherein, described first electrode and described second electrode are given prominence to from the top surface of described supporting member,Wherein, described second electrode passes through to contact with described first insulating barrier through the inside of described adhesion layer,Wherein, described first electrode extends to the top surface of described second insulating barrier from the lower surface of described supporting member,Wherein, the area of the top surface of described adhesion layer is at least greater than the area of the lower surface of described ray structure layer,Wherein, the thickness of described second insulating barrier is at least thick than the thickness of described adhesion layer,Wherein, described adhesion layer and described supporting member are adjacent to be formed.

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