Method for forming pad in wafer with three-dimensional stacking structure

Method for forming pad in wafer with three-dimensional stacking structure

  • CN 102,163,566 A
  • Filed: 02/21/2011
  • Published: 08/24/2011
  • Est. Priority Date: 02/22/2010
  • Status: Active Application
First Claim
Patent Images

1. method that forms pad in having the wafer of three-dimensional stacked structure comprises:

  • (a) first technology is in conjunction with device wafer and processed wafer;

    (b) second technology makes the back-thinned of the Si substrate that is formed on the described device wafer after described first technology;

    (c) the 3rd technology forms anti-reflecting layer and PMD (preferable alloy deposition) dielectric layer after described second technology;

    (d) the 4th technology, the back side that is being formed at the super contact on the described Si substrate after described the 3rd technology forms through hole;

    And(e) the 5th technology forms pad after described the 4th technology.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×