Recessed semiconductor substrate and associated technique

Recessed semiconductor substrate and associated technique

  • CN 102,169,841 A
  • Filed: 02/09/2011
  • Published: 08/31/2011
  • Est. Priority Date: 02/03/2010
  • Status: Active Application
First Claim
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1. method comprises:

  • Provide have (i) first surface and (ii) with the semiconductor-based end of the second surface of described first surface opposed;

    Form one or more via hole in the first surface at the described semiconductor-based end, described one or more via hole initially only passes the part at the described semiconductor-based end and does not arrive described second surface;

    On the first surface at the described semiconductor-based end, form dielectric film;

    Form redistributing layer on described dielectric film, described redistributing layer is electrically coupled to described one or more via hole;

    One or more nude film is coupled to described redistributing layer;

    Form moulding compound and wrap up at least a portion of described one or more nude film with envelope;

    AndMake the second surface at the described semiconductor-based end recessed to expose described one or more via hole.

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