Method for producing an epitaxially coated semiconductor wafer

Method for producing an epitaxially coated semiconductor wafer

  • CN 102,174,692 A
  • Filed: 05/07/2009
  • Published: 09/07/2011
  • Est. Priority Date: 05/09/2008
  • Status: Active Application
First Claim
Patent Images

1. be used to make the method for epitaxially coated semiconductor wafer, at least a semiconductor wafer through polishing on its front wherein is provided, be placed on the pedestal in the single-chip epitaxial reactor, and utilize under the depositing temperature of in 1000 to 1200 ℃

  • of chemical vapour depositions and on front of polishing, apply epitaxial film at it, be coated with thus, it is characterized in that, after enforcement is epitaxially coated, under depositing temperature, lifted this semiconductor wafer 1 to 60 second, to guarantee by sedimentary semiconductor material cooling off this wafer then in the disconnection that is connected that produces between pedestal and the wafer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×