GCL method for producing polycrystalline silicon

GCL method for producing polycrystalline silicon

CN
  • CN 102,180,467 A
  • Filed: 12/24/2010
  • Published: 09/14/2011
  • Est. Priority Date: 12/24/2010
  • Status: Active Application
First Claim
Patent Images

1. GCL method method for preparing polysilicon may further comprise the steps:

  • 1) provides the step in silica flour source, sources of hydrogen, chlorination hydrogen source, dichloro-dihydro silicon source, trichlorosilane source and silicon tetrachloride source;

    2) chlorine step of hydrogenation;

    with from the silica flour in described silica flour source, from the hydrogenchloride of described chlorination hydrogen source, from the silicon tetrachloride in described silicon tetrachloride source and from the hydrogen of described sources of hydrogen as raw material, make thick trichlorosilane A;

    3) purification step A;

    described thick trichlorosilane A is separated into silicon tetrachloride, dichloro-dihydro silicon and trichlorosilane, and it is fed to described silicon tetrachloride source, described dichloro-dihydro silicon source and the storage of described trichlorosilane source as corresponding feed respectively;

    4) anti-disproportionation step;

    with from the dichloro-dihydro silicon in described dichloro-dihydro silicon source and from the silicon tetrachloride in described silicon tetrachloride source as raw material, make thick trichlorosilane B;

    5) purification step B;

    described thick trichlorosilane B is separated into silicon tetrachloride, dichloro-dihydro silicon and trichlorosilane, and it is fed to described silicon tetrachloride source, described dichloro-dihydro silicon source and the storage of described trichlorosilane source as corresponding feed respectively;

    6) reduction step;

    with from the trichlorosilane in described trichlorosilane source, from the hydrogen of described sources of hydrogen and from the dichloro-dihydro silicon in described dichloro-dihydro silicon source as raw material, make polysilicon and by-product reduction tail gas;

    7) circulation step;

    described reduction tail gas is initially separated into hydrogen, hydrogenchloride and siliceous mixed solution, and described hydrogen and described hydrogenchloride is fed to described sources of hydrogen as corresponding feed respectively and described chlorination hydrogen source is stored, and described siliceous mixed solution is fed to purification step C;

    With8) purification step C;

    described siliceous mixed solution is separated into silicon tetrachloride, dichloro-dihydro silicon and trichlorosilane, and it is fed to described silicon tetrachloride source, described dichloro-dihydro silicon source and the storage of described trichlorosilane source as corresponding feed respectively,Wherein, described purification step A, described purification step B and described purification step C carry out as same purification step.

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