Low inductance power semiconductor subassembly

Low inductance power semiconductor subassembly

  • CN 102,195,458 B
  • Filed: 03/04/2011
  • Issued: 03/22/2019
  • Est. Priority Date: 03/05/2010
  • Status: Active Grant
First Claim
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1. power semiconductor assembly, the power semiconductor assembly is includedAt least two branch arms, the branch arm are respectively provided at least two power switch, the power switch directly orIt is connected indirectly on phase output (Ph1, Ph2, Ph3),Wherein each of power switch is all integrated in opening in semiconductor chip (1) at least two parallel connections respectivelyElement is closed,Wherein each of power switch is all disposed in power semiconductor modular, and each power semiconductor modular isIt is disposed adjacently to one another on one direction, wherein the first direction corresponds to the principal current direction of each branch arm,Wherein the semiconductor chip (1) of power switch is disposed adjacently to one another in the second direction moved towards perpendicular to first directionIn relevant power semiconductor modular,Furthermore the power semiconductor assembly has at least one strap, the strap is perpendicular to first and secondIt is arranged to power semiconductor modular separately on the third direction of direction trend, and the strap is in an electrically conductive mannerIt is connected on the power switch of at least one power semiconductor modular, wherein the current direction of the strap corresponds to firstDirection.

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