Deep ultraviolet semiconductor light-emitting device and manufacturing method thereof

Deep ultraviolet semiconductor light-emitting device and manufacturing method thereof

  • CN 102,208,522 A
  • Filed: 06/20/2011
  • Published: 10/05/2011
  • Est. Priority Date: 06/20/2011
  • Status: Active Application
First Claim
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1. deep ultraviolet light emitting semiconductor device comprises:

  • One has the substrate of conductive channel;

    One epitaxial light emission structure is made of n type semiconductor layer, luminescent layer, p type semiconductor layer successively;

    It is characterized in that;

    also compriseOne optical-mechanical supporting construction is provided with conductive channel;

    Described epitaxial light emission structure is sandwiched between aforesaid base plate and the optical-mechanical supporting construction, and optical-mechanical supporting construction one side is an exiting surface.

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