A kind of production method of big current ZK7000A fast-recovery commutation diode

A kind of production method of big current ZK7000A fast-recovery commutation diode

  • CN 102,214,571 B
  • Filed: 06/03/2011
  • Issued: 04/13/2016
  • Est. Priority Date: 06/03/2011
  • Status: Active Grant
First Claim
Patent Images

1. a production method for big current ZK7000A fast-recovery commutation diode, its processing step is as follows:

  • the diffusion of Wafer Cleaning, phosphorus oxychloride, safe-sided disk, expansion boron, nest plate, silicon chip anode surface evaporation of aluminum, molybdenum sheet steam gold, molybdenum sheet, aluminium flake, silicon chip loaded in order graphite jig carries out sintering, chip steams gold, alloy, angle lap, burn into are protected, electron irradiation and annealing;

    It is characterized in that;

    described phosphorus oxychloride diffusion process steps is;

    the silicon chip cleaned up is inserted silicon boat, and slowly push in diffusion furnace warm area, diffusion temperature is 1210 DEG C, and warm area error ±

    1 DEG C, oxygen carries freezing point POCl 3impurity source diffusion certain hour, makes its junction depth control at 18 ±

    2um;

    Described expansion boron processing step is;

    will clean up silicon chip abrasive disc face and be coated with one deck boron aluminum impurity source, dries, and anode antianode is to folded, put into silicon boat, push in diffusion furnace, diffusion furnace warm area temperature is 1260 DEG C, error ±

    1 DEG C in warm area, diffusion certain hour, makes its junction depth control at 60um;

    Described sintering process step is;

    tweezered on clean filter paper by the silicon chip that clean is good, dries under being placed on infrared ray;

    Aluminium flake;

    the aluminium flake corroded is dewatered twice forceps major on filter paper through acetone, dries under being placed on infrared ray;

    Molybdenum sheet;

    tweezered on clean filter paper by molybdenum sheet, dries under being placed on infrared ray;

    Graphite powder;

    leave in 80 ±

    2 DEG C of baking ovens stand-by;

    Sinter die-filling order and be followed successively by molybdenum sheet, aluminium flake, silicon chip and graphite powder, repeat by this, the thick 0.011-0.013mm of aluminium flake;

    Enter stove sintering, vacuum is evacuated to 5 ×

    10 -3pa, furnace body temperature is raised to 850 DEG C, starts blind roaster and heats up, control sintering temperature constant temperature;

    The processing step of described alloy is;

    folded by the qualified chip anode antianode of evaporation, graphite flake interval is used in centre, and put sintering furnace into, treat that furnace temperature rises to 850 DEG C, vacuum degree reaches 5 ×

    10 -3fall machine annealed alloy during Pa, alloy temperature controls at 430 DEG C, and constant temperature time closed heating power supply after 15 minutes, inflates and come out of the stove when furnace temperature is down to 150 DEG C.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×