Semiconductor die and method of manufacturing semiconductor feature

Semiconductor die and method of manufacturing semiconductor feature

  • CN 102,222,647 B
  • Filed: 11/02/2010
  • Issued: 05/10/2017
  • Est. Priority Date: 04/16/2010
  • Status: Active Grant
First Claim
Patent Images

1. a kind of semiconductor die, including:

  • One substrate;

    One joint sheet, positioned at the substrate top, the joint sheet has one first width;

    One polyimide layer, positioned at the substrate and joint sheet top, the polyimide layer has one the in joint sheet topOne opening, first opening has one second width;

    One silicon substrate protective layer, on the polyimide layer, the silicon substrate protective layer is open in the joint sheet top with one second,Second opening has one the 3rd width, and wherein first opening and second opening form a combined openings with side wall, cruellyThe dew part joint sheet;

    One underbump metallization layer, positioned at the side wall top of the combined openings, and on the silicon substrate protective layer, and contacts this and connectsClose the expose portion of pad;

    AndOne conducting element, in the underbump metallization layer, wherein the silicon substrate protective layer includes silicon nitride, silicon oxynitride, oxygenThe ratio of SiClx or carborundum, wherein the 3rd width and first width is 0.15~

    0.6, and second width less than thisThree width.

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