For the multilayer aluminium strip of soldering, soldering component, manufacture method and heat exchanger and purposes

For the multilayer aluminium strip of soldering, soldering component, manufacture method and heat exchanger and purposes

  • CN 102,227,287 B
  • Filed: 11/18/2009
  • Issued: 03/23/2016
  • Est. Priority Date: 11/28/2008
  • Status: Active Grant
First Claim
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1. aluminium strip (100,200,300), for component, described component has the profile of band brazing, wherein, described aluminium strip (100,200,300) has certain tape thickness, and at least one region of described aluminium strip (100,200,300):

  • The Part I of-tape thickness is occupied by the sandwich layer (1,10) of the first aluminium alloy;

    At least one Part II of-tape thickness is occupied by least one coated nitride layer (2.1,2.2,20.1,20.2) of the second aluminium alloy;

    -described first aluminium alloy and described second aluminium alloy are designed for formation " brown band " layer (30.1,30.2) during brazing process;

    And wherein,The tape thickness of-described aluminium strip (100,200,300) lower than 500 μ

    m and the thickness of the thickness of described sandwich layer (1,10) and/or described coated nitride layer (2.1,2.2,20.1,20.2) design like this, that is;

    -make after described brazing process, the tape thickness of at least 5% is also retained by described sandwich layer (1 at least one region,

         10) described first aluminium alloy occupies, and described " brown band " layer (30.1, 30.2) more than 20% of tape thickness is occupied, and described sandwich layer (1,

         10) the core main stor(e)y (1.1 at center is implemented in multilayer, 10.1) and at least one core side layer (1.2, 1.3), wherein said coated nitride layer (2.1, 2.2, 20.1, 20.2) and/or core side layer (1.2, 1.3) described " brown band " layer (30.1 of support is designed for, 30.2) formation, only a core main stor(e)y (1.1) is designed to suppress described " brown band " layer (30.1, 30.2) formation,-described core main stor(e)y (1.1,10.1) and described core side layer (1.3) have lower Si share than described coated nitride layer (2.1,2.2,20.1,20.2), and described core main stor(e)y (1.1,10.1) has higher Si share than described core side layer (1.2,1.3).

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