Cu-ni-si-co based copper ally for electronic materials and manufacturing method therefor

Cu-ni-si-co based copper ally for electronic materials and manufacturing method therefor

  • CN 102,227,510 A
  • Filed: 11/20/2009
  • Published: 10/26/2011
  • Est. Priority Date: 12/01/2008
  • Status: Active Application
First Claim
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1. copper alloy for electronic material, it is to contain Ni:

  • 1.0~

    2.5 quality %, Co;

    0.5~

    2.5 quality %, Si;

    0.3~

    1.2 quality %, and the copper alloy for electronic material that is made of Cu and unavoidable impurities of remainder, wherein,In the second phase particle of separating out in the parent phase, particle diameter is that the individual number density of the particle that 5nm is above, 50nm is following is 1 * 10 12

    1 * 10 14Individual/mm 3Particle diameter be 5nm above, less than the individual number density of the particle of 20nm to be that the ratio of the individual number density of the particle more than the 20nm, below the 50nm is represented with respect to particle diameter, be 3~

    6.

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