Formation method of LED

Formation method of LED

  • CN 102,231,414 A
  • Filed: 06/03/2011
  • Published: 11/02/2011
  • Est. Priority Date: 06/03/2011
  • Status: Active Application
First Claim
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1. the formation method of a LED is characterized in that, may further comprise the steps:

  • Si is provided substrate;

    On described Si substrate, form a plurality of bulge-structures, have certain interval between described per two bulge-structures;

    Form first semiconductor lamella that covers described a plurality of bulge-structures, and described first semiconductor lamella links to each other with the top of described a plurality of bulge-structures;

    WithOn described first semiconductor lamella, be formed with the LED structure that comprises first kind III-V compound material layer, luminescent layer and second type-iii-V compound material layer.

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