Semiconductor device for preventing crack in pad region and fabricating method thereof

Semiconductor device for preventing crack in pad region and fabricating method thereof

  • CN 102,244,059 A
  • Filed: 11/30/2010
  • Published: 11/16/2011
  • Est. Priority Date: 05/10/2010
  • Status: Active Application
First Claim
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1. semiconductor device comprises:

  • Following pad;

    Last pad, described upward pad is formed on down the top of pad;

    Insulating barrier, described insulating barrier are formed on down between pad and the last pad;

    Path net, described path net are used in insulating barrier down that pad and last pad are electrically connected, and it is netted that described path netting gear has, described netted in cell be connected to a plurality of cells adjacent with the formation web frame with this cell;

    At least one via hole is used in this cell of path net pad and last pad are electrically connected down.

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