Electronic sensor for nitric oxide

Electronic sensor for nitric oxide

  • CN 102,257,384 B
  • Filed: 12/10/2009
  • Issued: 09/21/2016
  • Est. Priority Date: 12/16/2008
  • Status: Active Grant
First Claim
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1. semiconductor device (1), it includes a pair being spaced apart the electrode (18) to limit channel region (16) in organic semiconductor layer (14), the grid structure (10) being used for controlling described channel region and the receptive layers (22) of the most overlapping described channel region, described receptive layers includes nitric oxide co-ordination complex, and wherein this nitric oxide co-ordination complex is the compound of formula III:

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