Plasma processing apparatus and method

Plasma processing apparatus and method

  • CN 102,263,026 B
  • Filed: 06/21/2005
  • Issued: 01/20/2016
  • Est. Priority Date: 06/21/2004
  • Status: Active Grant
First Claim
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1. a method of plasma processing, is characterized in that:

  • In container handling, the lower electrode of upper electrode and the processed substrate of supporting is oppositely disposed, while apply the first relatively high High frequency power of frequency to described upper electrode and apply the second relatively low High frequency power of frequency to described lower electrode, while supply processes gas in described container handling, to generate the plasma of described process gas, plasma treatment is carried out to the processed substrate be supported on described lower electrodeThis method of plasma processing has;

    the operation applying direct voltage to described upper electrode;

    With while apply direct voltage to described upper electrode, described processed substrate is carried out to the operation of plasma treatment,When carrying out main etching and overetched two-stage etching to the SiOC class film of the processed substrate be supported on described lower electrode, in described main etching, use CF 4, Ar, N 2, CHF 3combination as described process gas, described cross etching in, use C 4f 8, N 2, Ar combination as described process gas.

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