Backside illuminated CMOS imaging sensor

Backside illuminated CMOS imaging sensor

  • CN 102,270,646 A
  • Filed: 06/01/2010
  • Published: 12/07/2011
  • Est. Priority Date: 06/01/2010
  • Status: Active Application
First Claim
Patent Images

1. the cmos image sensor of a photodetector for backside-illuminated comprises:

  • Semiconductor substrate, described Semiconductor substrate have first surface and second surface on the other side;

    Described Semiconductor substrate comprises at least one pixel cell zone;

    Isolation structure is between the adjacent pixel unit zone;

    It is characterized in that described isolation structure is the deep trench isolation structure, described deep trench isolation structure runs throughThe first surface of described Semiconductor substrate and second surface.

View all claims

    Thank you for your feedback