Backside illuminated CMOS imaging sensor

Backside illuminated CMOS imaging sensor

  • CN 102,270,646 A
  • Filed: 06/01/2010
  • Published: 12/07/2011
  • Est. Priority Date: 06/01/2010
  • Status: Active Application
First Claim
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1. the cmos image sensor of a photodetector for backside-illuminated comprises:

  • Semiconductor substrate, described Semiconductor substrate have first surface and second surface on the other side;

    Described Semiconductor substrate comprises at least one pixel cell zone;

    Isolation structure is between the adjacent pixel unit zone;

    It is characterized in that described isolation structure is the deep trench isolation structure, described deep trench isolation structure runs throughThe first surface of described Semiconductor substrate and second surface.

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