For the manufacture of the method for semiconductor equipment

For the manufacture of the method for semiconductor equipment

  • CN 102,280,409 B
  • Filed: 03/27/2008
  • Issued: 11/25/2015
  • Est. Priority Date: 05/18/2007
  • Status: Active Grant
First Claim
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1. for the manufacture of a method for semiconductor equipment, it is characterized in that, comprise the following steps:

  • The first separating layer is formed in the first Semiconductor substrate, and in the second Semiconductor substrate, forming the second separating layer, the degree of depth of described first separating layer residing in described first Semiconductor substrate is different from the described second separating layer degree of depth residing in described second Semiconductor substrate;

    Described first Semiconductor substrate and described second Semiconductor substrate are engaged with support substrates;

    Described first Semiconductor substrate in described first separating layer is peeled off to form the first single-crystal semiconductor layer in described support substrates, and described second Semiconductor substrate in described second separating layer is peeled off to form the second single-crystal semiconductor layer in described support substrates, wherein said first single-crystal semiconductor layer is thinner than described second single-crystal semiconductor layer;

    Process to form the first protruding semiconductor layers and the second protruding semiconductor layers respectively to described first single-crystal semiconductor layer and described second single-crystal semiconductor layer;

    Described first protruding semiconductor layers forms first grid dielectric film and form second gate dielectric film on described second protruding semiconductor layers;

    Described first protruding semiconductor layers and described second protruding semiconductor layers each on form grid;

    Introduce impurity element with described first protruding semiconductor layers and described second protruding semiconductor layers each in form extrinsic region;

    Form the electrode being electrically connected to each of described extrinsic region.

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