Transistor power device capable of performing overvoltage protection on gate source and gate drain and method for making transistor power device

Transistor power device capable of performing overvoltage protection on gate source and gate drain and method for making transistor power device

  • CN 102,280,484 B
  • Filed: 08/06/2011
  • Issued: 06/03/2015
  • Est. Priority Date: 08/06/2011
  • Status: Active Grant
First Claim
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1. a transistor power device for grid source and grid leak overvoltage protection, comprises silicon chip, gate oxide, polysilicon layer, gate electrode, source electrode and drain electrode, it is characterized in that;

  • Also comprise a P+ region and a N+ region, described P+ region and described N+ region are separately positioned on the source region of described source electrode;

    Corresponding described N+ region, also comprises a diode, described N+ region and described Diode series, forms grid source diode protection zone;

    Corresponding described P+ region, also comprises a diode, described P+ region and described Diode series, forms grid leak diode protection region.

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