Multiple gate transistor having homogenously silicided fin end portions

Multiple gate transistor having homogenously silicided fin end portions

  • CN 102,292,799 A
  • Filed: 11/25/2009
  • Published: 12/21/2011
  • Est. Priority Date: 11/28/2008
  • Status: Active Application
First Claim
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1. method comprises:

  • Form dielectric material (230) on the end portion (210E) of a plurality of fins (210) of multi-gated transistor (200);

    Form opening (230A) in this dielectric material (230), so that extend through this end portion (210E);

    In the area of section (210F) of each this end portion (210E) that formation contact area (235) is exposed in this opening (230A);

    AndForm contact assembly (243) in this opening, this contact assembly (243) connects each this contact area (235).

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