Method for manufacturing semiconductor device

Method for manufacturing semiconductor device

  • CN 102,315,105 A
  • Filed: 07/08/2010
  • Published: 01/11/2012
  • Est. Priority Date: 07/08/2010
  • Status: Active Application
First Claim
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1. the manufacture method of a semiconductor device, this method comprises:

  • The spin coating first photoresistance glue PR on the wafer, and the ion that a PR carries out inert gas elements injected;

    The one PR is carried out photoetching, and after exposing N type metal oxide semiconductor NMOS pipe on the wafer, the ion that in wafer, carries out N type element injects, and forms the drain electrode and the source electrode of NMOS pipe;

    Remove a PR;

    Spin coating the 2nd PR on wafer, and the ion that the 2nd PR carries out inert gas elements injected;

    The 2nd PR is carried out photoetching, and after exposing P-type mos PMOS pipe on the wafer, the ion that in wafer, carries out P type element injects, and forms the drain electrode and the source electrode of PMOS pipe.

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