Method for manufacturing silicon crystal ingot

Method for manufacturing silicon crystal ingot

  • CN 102,337,582 A
  • Filed: 07/14/2010
  • Published: 02/01/2012
  • Est. Priority Date: 07/14/2010
  • Status: Active Application
First Claim
Patent Images

1. method of making the silicon wafer ingot casting comprises the following step:

  • One mould is provided, and said mould is applicable to through directional solidification method fusing and cooling silicon raw material;

    Adorn in a barrier layer to the said mould;

    Adorn at least one silicon seeds to the said mould and be placed on the said barrier layer;

    Adorn said silicon raw material to the said mould and be placed on said at least one silicon seeds;

    Heating said mould melts to obtain the silicon melt until the some of whole and said at least one silicon seeds of said silicon raw material;

    AndCool off said mould based on directional solidification method, cause said silicon melt to solidify by this to form said silicon wafer ingot casting.

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