Sensor device and manufacturing method

Sensor device and manufacturing method

  • CN 102,346,165 A
  • Filed: 07/27/2011
  • Published: 02/08/2012
  • Est. Priority Date: 07/29/2010
  • Status: Active Application
First Claim
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1. a sensor component (10) comprises the substrate (100) of carrying sensing element (110) and on said substrate, is used to the metallization stack that said sensing element provides interconnection, and said metallization stack comprises:

  • Be insulated a plurality of patterned metal layers (130a-d) that layer (120a-d) separates;

    Wherein the first metal layer (130c) comprises the electrode part (16) that is connected with sensing element conduction ground;

    Another metal level (130d) of facing the first metal layer comprises reference electrode part (18), and addressable fluid channel (14) is partly separated the electrode part with reference electrode from the top of metallization stack.

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