Reflective photomask and reflective photomask blank

Reflective photomask and reflective photomask blank

  • CN 102,369,588 B
  • Filed: 03/23/2010
  • Issued: 12/14/2016
  • Est. Priority Date: 04/02/2009
  • Status: Active Grant
First Claim
Patent Images

1. a reflective photomask, for reflection light being irradiated to transfer sample by reflection EUV light, its feature existsIn,This reflective photomask has:

  • Substrate,High reflecting part, its formed on the substrate,Low reflecting part, it is formed on described high reflecting part, and has been characterized pattern;

    The described low reflecting part being characterized pattern is at least laminated with more than one layer;

    At least one of which of the described low reflecting part being characterized pattern is SnO film,It is characterized the thickness of described low reflecting part of pattern at more than 25nm below 45nm,Described SnO film is amorphous material its oxygen the most noncrystal atomic number relative to Sn than O/Sn more than 1.0 1.5 withUnder.

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