Polycrystalline silicon and method for production thereof

Polycrystalline silicon and method for production thereof

  • CN 102,383,194 A
  • Filed: 08/25/2011
  • Published: 03/21/2012
  • Est. Priority Date: 08/25/2010
  • Status: Active Application
First Claim
Patent Images

1. polysilicon;

  • It comprises the polysilicon fragment;

    Wherein at least 90% fragment has 10 to 40mm size, it is characterized in that, particle diameter less than the silica dust particulate content of 400 μ

    m less than 15ppmw;

    Particle diameter less than the silica dust particulate content of 50 μ

    m less than 14ppmw;

    Less than 10ppmw, less than 3ppmw, its characteristic also is more than or equal to 0.1ppbw and is less than or equal to the metallic contaminants from surface of 100ppbw particle diameter particle diameter in addition less than the silica dust particulate content of 1 μ

    m less than the silica dust particulate content of 10 μ

    m.

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