Semiconductor structure and manufacturing method thereof

Semiconductor structure and manufacturing method thereof

  • CN 102,386,226 B
  • Filed: 08/31/2010
  • Issued: 08/28/2013
  • Est. Priority Date: 08/31/2010
  • Status: Active Grant
First Claim
Patent Images

1. semiconductor structure comprises:

  • Semiconductor substrate;

    Channel region is formed in the described Semiconductor substrate;

    Grid comprises dielectric layer and conductive layer, is formed at described channel region top;

    Source-drain area is positioned at the both sides of described grid;

    First shallow trench isolation from, be embedded in the described Semiconductor substrate, and length direction is parallel with described grid length direction;

    Second shallow trench isolation from, be positioned at described source-drain area both sides, with described first shallow trench isolation from joining,Wherein, described source-drain area comprise the both sides that are distributed in described grid relatively and with the first kind crystal layer of described second shallow trench isolation from adjacency, described second shallow trench isolation from upper surface be higher than or maintain an equal level in the upper surface of described source-drain area.

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