Method for producing novel substrate, epitaxial wafer and semiconductor device

Method for producing novel substrate, epitaxial wafer and semiconductor device

  • CN 102,412,124 A
  • Filed: 09/30/2011
  • Published: 04/11/2012
  • Est. Priority Date: 09/30/2011
  • Status: Active Application
First Claim
Patent Images

1. the production method of novel substrate, said novel substrate comprises substrate bulk, it is characterized in that, is provided with monocrystalline silicon layer on the substrate bulk surface;

  • Described monocrystalline silicon layer is that trichlorosilane and hydrogen react down at 900 ℃



    1050 ℃

    , and the monocrystalline silicon that reaction generates is deposited on the substrate bulk surface and forms.

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