Method for monitoring temperature of low-temperature rapid thermal treatment

Method for monitoring temperature of low-temperature rapid thermal treatment

  • CN 102,418,149 A
  • Filed: 09/25/2010
  • Published: 04/18/2012
  • Est. Priority Date: 09/25/2010
  • Status: Active Application
First Claim
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1. a low temperature quick heat treatment temperature monitoring method is characterized in that, comprising:

  • Provide the P type adulterated semiconducter substrate, said semiconductor substrate surface is formed with non-crystalline region;

    Said semiconducter substrate is carried out ion-activated processing;

    Said semiconducter substrate is carried out the low temperature rapid thermal process;

    Detect the substrate parameters of said semiconductor substrate surface;

    Based on the corresponding relation of substrate parameters and temperature of reaction, confirm said low temperature quick heat treatment real reaction temperature.

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