The temperature monitoring method of low temperature rapid thermal treatment

The temperature monitoring method of low temperature rapid thermal treatment

  • CN 102,418,149 B
  • Filed: 09/25/2010
  • Issued: 05/25/2016
  • Est. Priority Date: 09/25/2010
  • Status: Active Grant
First Claim
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1. a temperature monitoring method for low temperature rapid thermal treatment, is characterized in that, in MOS manufacture craftThe low temperature rapid thermal treatment process of formation nickle silicide in, the mistake of the ion that adulterates in based semiconductor substrateActive should be monitored the reaction temperature of low temperature rapid thermal treatment, to avoid the diffusion of nickle atom causedSubstrate defects, described temperature monitoring method comprises:

  • The Semiconductor substrate that the doping of P type is provided, described semiconductor substrate surface is formed with amorphous area;

    Described Semiconductor substrate is carried out to ion-activated processing;

    After doping ion in described Semiconductor substrate is activated, described Semiconductor substrate is carried out to low temperatureRapid thermal treatment, makes the substrate parameters of Semiconductor substrate change with the reaction temperature of low temperature rapid thermal treatmentAnd significant change;

    Detect the substrate parameters of described semiconductor substrate surface;

    Based on the corresponding relation of substrate parameters and reaction temperature, determine the reality of described low temperature rapid thermal treatmentReaction temperature;

    Wherein, described substrate parameters is heat wave value.

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