The implementation method of series connection FinFET

The implementation method of series connection FinFET

  • CN 102,420,145 B
  • Filed: 07/22/2011
  • Issued: 05/04/2016
  • Est. Priority Date: 09/24/2010
  • Status: Active Grant
First Claim
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1. a FinFET device, comprising:

  • The first semiconductor fin;

    The second semiconductor fin, is parallel to described the first semiconductor fin;

    Linear pattern gate electrode, is positioned at described the first semiconductor fin and described the second semiconductor fin top, andAnd form a FinFET and second with described the first semiconductor fin and described the second semiconductor fin respectivelyFinFET, wherein, a described FinFET is identical with the conduction type of described the 2nd FinFET, withAnd wherein, described linear pattern gate electrode extends to continuously described the second half from described the first semiconductor fin and leadsBody fin;

    AndThe first electrical connector, is positioned at a side of linear pattern gate electrode and by the source of a described FinFETThe utmost point is connected with the drain electrode of described the 2nd FinFET, wherein, the drain electrode of a described FinFET not withThe source electrode of described the 2nd FinFET is connected.

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