Semiconductor device and method of producing same

Semiconductor device and method of producing same

  • CN 102,439,699 A
  • Filed: 04/22/2010
  • Published: 05/02/2012
  • Est. Priority Date: 05/22/2009
  • Status: Active Application
First Claim
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1. semiconductor device that adopts carborundum, it comprises contact electrode and is conductive upper electrode for said contact electrode,Said contact electrode is formed by the alloy that contains titanium, aluminium and silicon and contacts with said carborundum,Said upper electrode is formed by aluminum or aluminum alloy, and contacts the said conduction that realizes for said contact electrode through said upper electrode is formed with said contact electrode.

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