Image sensor device

Image sensor device

  • CN 102,446,944 A
  • Filed: 01/31/2008
  • Published: 05/09/2012
  • Est. Priority Date: 01/31/2007
  • Status: Active Application
First Claim
Patent Images

1. image sensor device comprises:

  • Semiconductor substrate has pixel region and surrounding zone;

    Light sensing element is formed in this pixel region;

    At least one transistor is formed in this pixel region and this surrounding zone, has source/drain region;

    First oxide layer, in this source/drain region formation formation before, and be covered on this light sensing element;

    AndSecond oxide layer forms after this source/drain region forms, and is covered on this first oxide layer.

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