Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

  • CN 102,460,652 A
  • Filed: 03/09/2010
  • Published: 05/16/2012
  • Est. Priority Date: 05/12/2009
  • Status: Active Application
First Claim
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1. method that is formed for the knot termination extension of electronic device, said method comprises:

  • On the semiconductor layer of contiguous main tie region, form mask, said semiconductor layer has first conduction type and said mask comprises a plurality of openings;

    The source of the alloy of second conduction type is provided in said semiconductor layer;

    With the dopant of said second conduction type in the said semiconductor layer with said mask open in the corresponding said semiconductor layer of each mask open in form doped region;

    When make the alloy peak with said mask open in each mask open corresponding near the said semiconductor layer of said semiconductor layer surface in the time, said doped region merges;

    AndRemoval comprises the nearly surf zone of the said semiconductor layer at alloy peak.

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