Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
- CN 102,460,652 A
- Filed: 03/09/2010
- Published: 05/16/2012
- Est. Priority Date: 05/12/2009
- Status: Active Application
- EN CH
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- Pin
