Vacuum vapor deposition system

Vacuum vapor deposition system

  • CN 102,465,264 A
  • Filed: 11/01/2011
  • Published: 05/23/2012
  • Est. Priority Date: 11/04/2010
  • Status: Active Application
First Claim
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1. vacuum vapor deposition system comprises:

  • Vacuum chamber;

    Substrate holding mechanism, this substrate holding mechanism keeps substrate;

    Vapor deposition source, this vapor deposition source produce will be on substrate the steam of the film forming gas-phase depositing materials of shape;

    The film thickness transmitter that is used to monitor, when gas-phase depositing materials formed film on substrate, the film thickness sensor measurement that this is used to monitor adhered to the adhesive capacity of the gas-phase depositing materials of Sensor section;

    The film thickness transmitter that is used to calibrate, the film thickness pick up calibration that this is used to calibrate by the film thickness sensor measurement that is used to monitor to said adhesive capacity,System, this system is based on the temperature of being controlled vapor deposition source by the film thickness sensor measurement that is used to monitor to the vapor deposition rate of the said adhesive capacity calculating gas-phase depositing materials of gas-phase depositing materials and based on the vapour deposition rate of being calculated;

    Wherein, from the distance L of center to the film thickness transmitter that is used to calibrate of the opening of vapor deposition source 1With distance L from center to the film thickness transmitter that is used to monitor of the opening of vapor deposition source 2Satisfy L 1

    L 2Relation;

    And Vertical line that forms the surface by film and the formed angle θ

    of straight line that makes that the center of opening of vapor deposition source is connected with the film thickness transmitter that is used to calibrate from center to the substrate of the opening of vapor deposition source 1And vertical line that forms the surface by film and the formed angle θ

    of straight line that makes that the center of opening of vapor deposition source is connected with the film thickness transmitter that is used to monitor from center to the substrate of the opening of vapor deposition source 2Satisfy θ

    2>



    1Relation.

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