Substrate for integrated circuit and formation method thereof

Substrate for integrated circuit and formation method thereof

  • CN 102,479,742 A
  • Filed: 11/30/2010
  • Published: 05/30/2012
  • Est. Priority Date: 11/30/2010
  • Status: Active Application
First Claim
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1. method of making substrate, this method comprises the steps:

  • On the body silicon materials, form hard mask layer;

    This hard mask layer of etching and this body silicon materials are to form the first of at least one groove, and this first is used to realize that shallow trench isolation leaves;

    On the sidewall of said groove, form dielectric film;

    The further said body silicon materials of etching, thus make said groove deepen to form the second portion of said groove;

    Between the second portion of complete oxidation or the said groove of nitrogenize and the part of the said body silicon materials between the outside of the second portion of said groove and said body silicon materials;

    Filled dielectric material in first and second part of said groove;

    AndRemove said hard mask layer.

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