Method For Producing Silicon Carbide

Method For Producing Silicon Carbide

  • CN 102,482,102 A
  • Filed: 08/11/2010
  • Published: 05/30/2012
  • Est. Priority Date: 08/13/2009
  • Status: Active Application
First Claim
Patent Images

1. the method for manufacture of a silit is characterized in that, said method may further comprise the steps at least:

  • Carry out solid-liquid separation to solution that contains SiC particulate and/or Si particulate at least or waste liquid with the sepa-ration aid that contains carbon dust and silica powder at least, obtain solids component;

    As required, mix said solids component with the additive that contains carbon dust and/or silica powder at least;

    For obtaining silit, said solids component or with said additive blended solids component in non-oxidizing atmosphere, be higher than 1850 ℃

    , be lower than 2400 ℃ and

    carry out reacting by heating.

View all claims

    Thank you for your feedback