Preparation method of semiconductor device

Preparation method of semiconductor device

  • CN 102,487,039 A
  • Filed: 12/03/2010
  • Published: 06/06/2012
  • Est. Priority Date: 12/03/2010
  • Status: Active Application
First Claim
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1. the manufacturing approach of a semiconductor device comprises:

  • The Semiconductor substrate that is formed with metal interconnecting wires is provided;

    Form dielectric layer at said semiconductor substrate surface;

    Form silicon carbide layer, oxide layer and hard mask layer that nitrogen mixes successively on said dielectric layer surface;

    Silicon carbide layer and dielectric layer that the said hard mask layer of dry etching, oxide layer, nitrogen mix form opening in the position corresponding with said metal interconnecting wires;

    The said Semiconductor substrate of wet-cleaned.

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