Aminovinylsilane for CVD and ALD SIO2 films

Aminovinylsilane for CVD and ALD SIO2 films

  • CN 102,534,548 A
  • Filed: 12/09/2011
  • Published: 07/04/2012
  • Est. Priority Date: 12/09/2010
  • Status: Active Application
First Claim
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1. low pressure, thermal chemical vapor deposition method that is formed on the silica membrane that has extremely low wet method etch-rate in the HF solution comprises:

  • A., first precursor delivery to low pressure, the thermal chemical vapor deposition reactor in silicon source will be provided, and wherein this first precursor is selected from;

    R 1nR 2mSi (NR 3R 4) 4-n-m(R 1R 2SiNR 3) pThe ring silazane, R wherein 1Be C 2-C 10Thiazolinyl or aromatic base are preferably selected from vinyl, allyl group and phenyl;

    R 2, R 3And R 4Be selected from H, straight chain, side chain or ring-type C 1-C 10Alkyl, straight chain, side chain or ring-type C 2-C 10Thiazolinyl, and aromatic base;

    And n=1-3, m=0-2, p=3-4;

    Preferably, said first precursor is two (isopropylamino) vinyl methyl-monosilanes;

    B., second precursor delivery that oxygen source will be provided is to this reactor drum;

    C. make the reaction under the pressure of 400 ℃

    to 700 ℃

    temperature and 100mT to 1T of first and second precursors.

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