Temperature control of a substrate during a plasma ion implantation process for patterned disc media applications

Temperature control of a substrate during a plasma ion implantation process for patterned disc media applications

  • CN 102,576,548 A
  • Filed: 10/20/2010
  • Published: 07/11/2012
  • Est. Priority Date: 11/03/2009
  • Status: Active Application
First Claim
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1. control basal plate method of temperature during the plasma ion injection technology comprises the following step:

  • (a) in treatment chamber, on substrate, carry out first of plasma ion injection technology and partly reached for first period, be formed with the magnetic sensitive layer on the said substrate, the temperature of wherein said substrate is maintained at and is lower than 150 degree Celsius approximately;

    (b) after accomplishing said first part of said plasma ion injection technology, cool off the temperature of said substrate;

    And(c) on said substrate, carry out said plasma ion injection technology second partly, the temperature of wherein said substrate is kept is lower than 150 degree Celsius.

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