Epitaxial structure and preparation method thereof

Epitaxial structure and preparation method thereof

  • CN 102,593,272 A
  • Filed: 01/24/2011
  • Published: 07/18/2012
  • Est. Priority Date: 01/12/2011
  • Status: Active Grant
First Claim
Patent Images

1. the preparation method of an epitaxial structure, it may further comprise the steps:

  • One substrate is provided, and this substrate has the epitaxial growth plane of a support outer layer growth;

    Epitaxial growth plane in said substrate is provided with a carbon nanotube layer;

    AndEpitaxial growth plane grown epitaxial layer in substrate.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×