Semiconductor device of soi (silicon on insulator) structure, and its manufacturing method

Semiconductor device of soi (silicon on insulator) structure, and its manufacturing method

  • CN 102,637,699 A
  • Filed: 10/20/2008
  • Published: 08/15/2012
  • Est. Priority Date: 10/22/2007
  • Status: Active Application
First Claim
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1. the semiconductor device of a soi structure comprises:

  • SOI substrate (100), the first conductivity type active layer (3) that it comprises the silicon chip (1) processed by monocrystalline silicon, processed by monocrystalline silicon and be positioned at said silicon chip (1) and active layer (3) between buried insulating layer (2);

    WithSecond conductive layer (5,8,9), it is formed in the surface portion of said active layer (3), constitutes PN junction with said active layer (3), whereinThe silicon crystal lattice of said active layer (3) deforms with the distortion of lattice layer (4) of formation as adsorption site,When through cathode-ray luminescence technical Analysis distortion of lattice layer (4), wavelength X is that the peak value of the luminous intensity of 1535nm is restricted to D1 line peak strength, and wavelength X is that the peak value of the luminous intensity of 1130nm is restricted to T0 line peak strength, andThe ratio of D1 line peak strength and T0 line peak strength is smaller or equal to 1/3.

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