Thin film transistor and manufacturing method thereof as well as array substrate and display device

Thin film transistor and manufacturing method thereof as well as array substrate and display device

  • CN 102,709,326 A
  • Filed: 04/28/2012
  • Published: 10/03/2012
  • Est. Priority Date: 04/28/2012
  • Status: Active Application
First Claim
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1. a thin-film transistor comprises the grid, gate insulation layer, active layer and the source-drain electrode layer that are formed on the substrate, and said source-drain electrode layer comprises the source electrode and the drain electrode of said thin-film transistor;

  • It is characterized in that said active layer adopts metal-oxide semiconductor (MOS), between said active layer and said gate insulation layer, is provided with metal level, to reduce the carrier capture effect between said active layer and the gate insulation layer.

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