Thin-film magnetoresistive sensor element and thin-film magnetoresistive bridge

Thin-film magnetoresistive sensor element and thin-film magnetoresistive bridge

CN
  • CN 102,721,427 B
  • Filed: 06/20/2012
  • Issued: 05/20/2015
  • Est. Priority Date: 06/20/2012
  • Status: Active Grant
First Claim
Patent Images

1. a thin-film magnetoresistive sensor element, is characterized in that:

  • its structure comprises bottom electrode, Seed Layer, Antiferromagnetic pinning layer, magnetic pinned layer structure, nonmagnetic spacer layers, free magnetic layer, protective seam, top electrode, bias layer successively;

    The material of described magnetic nailed layer is CoFeB, CoFe, or SAF structure C oFe/Ru/CoFe, CoFe/Ru/CoFeB/Ta/CoFeB;

    Its material of described free magnetic layer is CoFeB, CoFe, CoFeB/NiF, CoFe/NiFe, CoFeB/Ta/NiFe or CoFe/Ta/NiFe;

    Its material of described bias layer is CoCrPt, CoPt, FePt, or consisting of multi-layer film structure Ru/CoPt/Ru/CoPt, Ta/CoPt/Ta/CoPt, Ta/FePt/Ta/FePt, Ru/FePt/Ru/FePt;

    The magnetic moment direction of described magnetic nailed layer is mutually vertical with the magnetic moment direction of free magnetic layer;

    The magnetic moment direction of described free magnetic layer by bias layer produce the biased of magnetic field, thus perpendicular to the magnetic moment direction of magnetic nailed layer.

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