Polycrystal silicon ingot and preparation method thereof, polysilicon chip and crucible used for polycrystalline silicon ingot casting

Polycrystal silicon ingot and preparation method thereof, polysilicon chip and crucible used for polycrystalline silicon ingot casting

  • CN 102,776,561 B
  • Filed: 04/01/2012
  • Issued: 12/15/2017
  • Est. Priority Date: 04/01/2012
  • Status: Active Grant
First Claim
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1. the preparation method of polycrystal silicon ingot, it is characterised in that comprise the following steps:

  • (1) silicon nitride coating is set in crucible bottom, has forming core in the silicon nitride coating surface attachment of the crucible bottomSource, form forming core active layer;

    The forming core source is the mixture of both silica flour and silicon nitride powder;

    Wherein, the silica flour and the nitrogenThe mass ratio of SiClx powder is 6;

    4, the particle diameter of the silica flour is 0.1~10 μ

    m, and the particle diameter of the silicon nitride powder is 0.5~50 μ

    m;

    (2) silicon material of molten condition is set in the forming core active layer;

    (3) temperature in the crucible is controlled to form temperature ladder along being gradually increasing perpendicular to the crucible bottom upwardly directionDegree so that the silicon material of the molten condition is crystallized using forming core source forming core, and polycrystal silicon ingot is made.

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