Ferroelectric thin film/buffering layer/semiconductor integrated device and preparation method thereof

Ferroelectric thin film/buffering layer/semiconductor integrated device and preparation method thereof

  • CN 102,842,672 A
  • Filed: 09/06/2012
  • Published: 12/26/2012
  • Est. Priority Date: 09/06/2012
  • Status: Active Grant
First Claim
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1. ferroelectric thin film/resilient coating/semiconductor integrated device is characterized in that, comprises Semiconductor substrate substrate and ferroelectric thin film, is provided with the nanometer resilient coating between substrate base and the ferroelectric thin film.

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