×

Ferroelectric thin film/buffering layer/semiconductor integrated device and preparation method thereof

Ferroelectric thin film/buffering layer/semiconductor integrated device and preparation method thereof

  • CN 102,842,672 A
  • Filed: 09/06/2012
  • Published: 12/26/2012
  • Est. Priority Date: 09/06/2012
  • Status: Active Application
×
×