Ferroelectric thin film/resilient coating/semiconductor integrated device and preparation method

Ferroelectric thin film/resilient coating/semiconductor integrated device and preparation method

  • CN 102,842,672 B
  • Filed: 09/06/2012
  • Issued: 01/20/2016
  • Est. Priority Date: 09/06/2012
  • Status: Active Grant
First Claim
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1. ferroelectric thin film/resilient coating/semiconductor integrated device, it is characterized in that, comprise Semiconductor substrate substrate and ferroelectric thin film, nanometer resilient coating is provided with between substrate base and ferroelectric thin film, described resilient coating is ZnO or doped with metal elements ZnO material, its crystal lattice orientation is (002), and the thickness of described nanometer resilient coating is below 100nm;

  • The material of described ferroelectric thin film is LiNbO 3or the LN material of doped with Mg atom.

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