Magneto-resistor integrated chip for current sensor

Magneto-resistor integrated chip for current sensor

CN
  • CN 102,890,175 A
  • Filed: 10/24/2012
  • Published: 01/23/2013
  • Est. Priority Date: 10/24/2012
  • Status: Active Application
First Claim
Patent Images

1. the magneto-resistor integrated chip that is used for current sensor, it is characterized in that, this magneto-resistor integrated chip comprises 4N (N=1,2,3,4 ...) chip unit that individual structure is identical, each described chip unit is multi-layer film structure, each described chip unit comprises compensating wire layer, magnetoresistive element and at least one soft magnetosphere;

  • Described compensating wire layer, described magnetoresistive element and described soft magnetosphere gap each other are provided with insulation course, the form fit of the shape of described insulation course and described compensating wire layer, described magnetoresistive element and described soft magnetosphere;

    The compensating wire layer of a described 4N chip unit is integrally formed, and this compensating wire layer is " U " font within being parallel to the plane of substrate;

    The magnetoresistive element of a described 4N chip unit is identical, and the magnetoresistive element of a described 4N chip unit connects and composes an electric bridge.

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