High-k dielectric liners in shallow trench isolations

High-k dielectric liners in shallow trench isolations

  • CN 102,916,020 A
  • Filed: 01/12/2012
  • Published: 02/06/2013
  • Est. Priority Date: 08/04/2011
  • Status: Active Application
First Claim
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1. device comprises:

  • Semiconductor substrate comprises end face;

    Dielectric material extends to the described Semiconductor substrate from described end face;

    AndHigh k dielectric layer comprises high-k dielectric material, and wherein, described high k dielectric layer is included in first and the second portion below described dielectric material on the described dielectric material sidewall.

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